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IRFB4115 MOSFET IRFB4115 USED:100 breaking out all digital and

SKU: 97982848746

4.5
USD125.00 USD148.00

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IRFB4115 MOSFET IRFB4115 USED:100 breaking out all digital andIRFB4115 mosfet details: Type of Transistor: MOSFET Type of Control Channel: N Channel Pd Maximum Power Dissipation: 380 W Vds Maximum Drain Source Voltage: 150 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 5 V Id Maximum Drain Current: 104 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 77 nC tr Rise Time: 73 nS Coss Output Capacitance: 490 pF Rds Maximum Drain Source On State Resistance: 0. 011 Ohm

Store: cgm.lt · Domain: cgm.lt

Description

breaking out all digital and analog pins into convenient 3-pin sensor headers (VCC

Parameter Value Part Number IPP60R041C6 / 60R041C6 Type N-Channel Power MOSFET V₂₂(BR)DSS 600V I₂ (Continuous Drain Current) 41A @ 25°C R₂₂(on) (max) 41mΩ @ V₂GS = 10V V₂GS (Gate-Source Voltage) ±20V Q₂ (Total Gate Charge) Typ

which determined the function of all nine pins as a standard so that multiple companies could design them into their products

Arduino to breadboard connections

ESP32 with DAC output

IRFB4115 MOSFET IRFB4115 USED:100 breaking out all digital andIRFB4115 mosfet details: Type of Transistor: MOSFET Type of Control Channel: N Channel Pd Maximum Power Dissipation: 380 W Vds Maximum Drain Source Voltage: 150 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 5 V Id Maximum Drain Current: 104 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 77 nC tr Rise Time: 73 nS Coss Output Capacitance: 490 pF Rds Maximum Drain Source On State Resistance: 0. 011 Ohm

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